| | uqpxrpu| }wu uqrp y}u~u~yu y {pwtu y|wu~yu t|w~ q y|xrp~ t| tywu~y q|u rtr }~s ~u }uy| ~y r |pu KPD y sus rt~pqwu~y t|w~ p{wu y}uu ry ty~rp y ru|yyrpu ru~ prpyz ~p rx~y{ prpy , } pxp }wu q q|u }~y uqpxrpu| , p{ ~pxrpu}u ru{~u pr|u~yu (pr|u~yu {} ru{p) , spqpyp} , y~uyy t|wp| r pr|u~yy u~quw~}y ~pp}y (t 10 . ) , {u ~u }wu q uu~ utr} tr u~p|~ {|uz rxp~ y u uqyu|uz q|uu y{u y}u~u~yu ru{~s pr|u~y y~~~}y tryspu|}y , ||uzq) . B}uu ~~z p - Insulated-gate bipolar transistors) ,@ https://prom-electric.ru/articles/8/98636/
|