| uqpxrpu| |wy t| tsy uqyu|uz uu}u~~s {p uqpxrpu| O~r~}y |u}u~p}y p~s uqpxrpu| . , xpyp) . B uzy zr uqpxrp~y ~~s {p , q |y x~p{uu}u~~u ~pwu~yu u} y p~tp~} yp~yy 220/380 B ~puu ru} }uwt px|y~}y uwy}p}y us rt~ ru|yy~ u , p}rpur , p}|yt upx~s y~rup xp{|pu r y{} typpx~u {uz y r ru}u~~ p~ us|yu}z |u{yrt }wu rxrp |{ ty~ : rx}w~ r|u~y ~~z pz r}|u r ru}u~~ p~ us|yu}z |u{yrt rx|psp xptpy . . Ix s }rs y~rup ~pwu~y y~rup . u . Dp~~ q|u} ut|pspu up q|y~r ~uqty} ~{yz r }y~ y xr|u : tpr|u~yu ~uutru~~ t{|p { x~pyu|~} ru~y tpr|u~y r |ut~yu tuy|uy yru| { |w~u~y {~{yy tryspu| , {p~ p~r , y p|sy} pr|u~y , ~urx}w~ , y } q}{y (p~p , ur|yz qru~~ |u{}up~yu{u uqpxrp~yu }wu q yxr|~ ru|yu~ r typpx~u 0 400C y {|ppy~~ ptr ~p uwy} y{|yy up{yr~z ~usyy t| uqpxrp~y ~usyy r p~xyp . I~ru ~pwu~y y|x pr~}~z y~ru r|u y|xrp~yu r~u~us yr|u~y ~p ~p~ psuspr , }}u~p , ru~~u tpr|u~yu ~pp r{|pu }} r{|u~yu} tryspu| ru~y|p y|y ~ywu r~ , } y~ru xptp~~} tpr|u~yu} . B {~u 80- ry|y y {y y zr wu~y u uqyu|uz ru~ ry sp}~y{ r xppt~ p~p . D| ru~y ~ptuw~y , r{yz }}u~ . Dp~~p q|u}p ~u |{ trp rx}w~ ~yz r{|u~y |ypu . . Tzrp , } y~ru , qtrp~y , 5 %) ; }u~y y yxq~s tpr|u~y ( tpy{} tpr|u~y r typpx~u x}upus p~}pp . R u} z u}u . K|pyu{y} uu~yu} p{z ~psx{z ut~us typpx~p ~pwu~y xr| rxrpp ~usy ~p rtu uqpxrpu| yr tpy{r {y ~p }up||-{yt-|rt~y{r |ur p~xyp (MOSFET - y|r |rt~y{r |u}u~r , ~ r {|ppy y q|uu) . D| |u~y pqy utp . Kp{ y q|uu y } ...@u}~ p~ uqpxrpu|uz
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